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| V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 s JEDEC Standard 3.3V Power Supply s The V54C316162V is ideally suited for high performance graphics peripheral applications s Single Pulsed RAS Interface s Programmable CAS Latency: 2, 3 s All Inputs are sampled at the positive going edge of clock s Programmable Wrap Sequence: Sequential or Interleave s Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave s UDQM & LDQM for byte masking s Auto & Self Refresh s 4K Refresh Cycles/64 ms s Burst Read with Single Write Operation CILETIV LESOM V54C316162V Clock Frequency (tCK) Latency Cycle Time (tCK) Access Time (tAC ) -5 200 3 5 5 -55 183 3 5.5 5.3 -6 166 3 6 5.5 -7 143 3 7 5.5 Unit MHz clocks ns ns Features Description The V54C316162V is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the system clock. The CAS latency, burst length and burst sequence must be programmed into device prior to access operation. V54C316162V Rev.2.9 September 2001 1 V54C316162V Pin Names CLK CKE CS Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select Data Input/Output Data Mask Power (+3.3V) Ground Power for I/O's (+3.3V) Ground for I/O's Not connected CILETIV LESOM 50 Pin Plastic TSOP-II PIN CONFIGURATION Top View VCC I/O1 I/O2 VSSQ I/O3 I/O4 VCCQ I/O5 I/O6 VSSQ I/O7 I/O8 VCCQ LDQM WE CAS RAS CS BA A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 V54C316162V-01 VSS I/O16 I/O15 VSSQ I/O14 I/O13 VCCQ I/O12 I/O11 VSSQ I/O10 I/O9 VCCQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 VSS RAS CAS WE A0-A10 BA I/O1-I/O16 LDQM, UDQM VCC VSS VCCQ VSSQ NC V54C316162V Rev. 2.9 September 2001 2 V54C316162V DQMi Column Decoder Column Decoder Sense Amplifier RAS CAS WE DQMi Timing Register Row Decoder Row Decoder Row Address Buffer Column Address Counter Latency 8 Burst Length CLK Programming Register A0-A10, BA Column Address Buffer Row Addresses Address A0-A7, BA Column Addresses V54C316162V-02 V54C316162V Rev.2.9 September 2001 3 Output Buffer CLK CKE CS Memory Array Bank 0 512k x 16 Sense Amplifier UDQM LDQM Memory Array Bank 1 512k x 16 Input Buffer CILETIV LESOM Block Diagram Write Control Logic MUX I/O1-I/O16 Refresh Counter V54C316162V CILETIV LESOM Pin CLK CKE Signal Pin Description Name Clock Input Clock Enable Input Function System clock input. Active on the positive rising edge to sample all inptus Activates the CLK signal when high and deactivates the CLK when low. CKE low initiates the power down mode, suspend mode, or the self refresh mode Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQMi Latches row addresses on the positive edge of CLK with RAS low. Enables row access & precharge Latches column addresses on the positive edge of CLK with CAS low. Enables column access Enables write operation During a bank activate command, A0-A10 defines the row address. During a read or write command, A0-A7 defines the column address. In addition to the column address A10 is used to invoke auto precharge BA define the bank to be precharged. A10 is low, auto precharge is disabled during a precharge cycle, If A10 is high, both bank will be precharged , if A10 is low, the BA is used to decide which bank to precharge. If A10 is high, all banks will be precharged. Selects which bank to activate. BA low select bank A and high selects bank B Data inputs/output are multiplexed on the same pins Makes data output Hi-Z. Blocks data input when DQM is active Power Supply. +3.3V 0.3V/ground Provides isolated power/ground to DQs for improved noise immunity CS Chip Select RAS Row Address Strobe CAS Column Address Strobe WE A0-A10 Write Enable Address BA Bank Select I/O1-I/O16 UDQM, LDQM VDD/VSS VDDQ/VSSQ NC Data Input/Output Data Input/Output Mask Power Supply/Ground Data Output Power/Ground No Connection V54C316162V Rev.2.9 September 2001 4 V54C316162V The default power on state of the mode register is supplier specific and may be undefined. The following power on and initialization sequence guarantees the device is preconditioned to each users specific needs. Like a conventional DRAM, the Synchronous DRAM must be powered up and initialized in a predefined manner. During power on, all VCC and VCCQ pins must be built up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power on voltage must not exceed VCC+0.3V on any of the input pins or VCC supplies. The CLK signal must be started at the same time. After power on, an initial pause of 200 s is required followed by a precharge of both banks using the precharge command. To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also required.These may be done before or after programming the Mode Register. Failure to follow these steps may lead to unpredictable start-up modes. 5 CILETIV LESOM A9 0 1 A6 0 0 0 0 1 1 1 A5 0 0 1 1 0 1 1 Address Input for Mode Set (Mode Register Operation) A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus (Ax) Write Burst Length Test Mode CAS Latency BT Burst Length Mode Register Write Burst Length Length Burst Single Bit Test Mode A8 0 A7 0 Mode Mode Reg Set Burst Type A3 0 1 Type Sequential Interleave CAS Latency A4 0 1 0 1 1 0 1 Latency Reserve Reserve 2 3 Reserve Reserve Reserve Burst Length Length A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 Sequential 0 1 0 1 0 1 0 1 1 2 4 8 Reserve Reserve Reserve Full Page Interleave 1 2 4 8 Reserve Reserve Reserve Reserve Power On and Initialization Programming the Mode Register The Mode register designates the operation mode at the read or write cycle. This register is divided into 4 fields. A Burst Length Field to set the length of the burst, an Addressing Selection bit to program the column access sequence in a burst cycle (interleaved or sequential), a CAS Latency Field to set the access time at clock cycle and a Operation mode field to differentiate between normal operation (Burst read and burst Write) and a special Burst Read and Single Write mode. The mode set operation must be done before any activate command after the initial power up. Any content of the mode register can be altered by re-executing the mode set command. All banks must be in precharged state and CKE must be high at least one clock before the mode set operation. After the mode register is set, a Standby or NOP command is required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate the mode set operation. Address input data at this timing defines parameters to be set as shown in the previous table. V54C316162V Rev. 2.9 September 2001 V54C316162V Similar to the page mode of conventional DRAM's, burst read or write accesses on any column address are possible once the RAS cycle latches the sense amplifiers. The maximum tRAS or the refresh interval time limits the number of random column accesses. A new burst access can be done even before the previous burst ends. The interrupt operation at every clock cycles is supported. When the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. An interrupt which accompanies with an operation change from a read to a write is possible by exploiting DQM to avoid bus contention. When two or more banks are activated sequentially, interleaved bank read or write operations are possible. With the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. Once two or more banks are activated, column to column interleave operation can be done between different pages. When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the wordline are set. A CAS cycle is triggered by setting RAS high and CAS low at a clock timing after a necessary delay, tRCD, from the RAS timing. WE is used to define either a read (WE = H) or a write (WE = L) at this stage. SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or write operations are allowed at up to a 166 MHz data rate. The numbers of serial data bits are the burst length programmed at the mode set operation, i.e., one of 1, 2, 4, 8 and full page. Column addresses are segmented by the burst length and serial data accesses are done within this boundary. The first column address to be accessed is supplied at the CAS timing and the subsequent addresses are generated automatically by the programmed burst length and its sequence. For example, in a burst length of 8 with interleave sequence, if the first address is `2', then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5. Full page burst operation is only possible using the sequential burst type and page length is a function of the I/O organisation and column addressing. Full page burst operation do not self terminate once the burst length has been reached. In other words, unlike burst length of 2, 4 or 8, full page burst continues until it is terminated using another command. Burst Length and Sequence: Burst Starting Address Length (A2 A1 A0) 2 4 xx0 xx1 x00 x01 x10 x11 000 001 010 011 100 101 110 111 nnn 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 0, 1, 2, 3, Sequential Burst Addressing (decimal) 0, 1 1, 0 1, 2, 3, 0, 3 4 5 6 7 0 1 2 2, 3, 0, 1, 4 5 6 7 0 1 2 3 3 0 1 2 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 0, 1, 2, 3, Interleave Burst Addressing (decimal) 0, 1 1, 0 1, 0, 3, 2, 3 2 1 0 7 6 5 4 2, 3, 0, 1, 4 5 6 7 0 1 2 3 3 2 1 0 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0 CILETIV LESOM 8 Full Page Read and Write Operation Refresh Mode SDRAM has two refresh modes, Auto Refresh and Self Refresh. Auto Refresh is similar to the CAS -before-RAS refresh of conventional DRAMs. All of banks must be precharged before applying any refresh mode. An on-chip address counter increments the word and the bank addresses and no bank information is required for both refresh modes. Cn, Cn+1, Cn+2,..... not supported V54C316162V Rev. 2.9 September 2001 6 V54C316162V Auto Precharge Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS timing accepts one extra address, A10, to determine whether the chip restores or not after the operation. If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation one clock before the last data out for CAS latencies 2, two clocks for CAS latencies 3. If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation a time delay equal to tWR (Write recovery time) after the last data in. The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are held high at a clock timing. The mode restores word line after the refresh and no external precharge command is necessary. A minimum tRC time is required between two automatic refreshes in a burst refresh mode. The same rule applies to any access command after the automatic refresh operation. The chip has an on-chip timer and the Self Refresh mode is available. It enters the mode when RAS, CAS, and CKE are low and WE is high at a clock timing. All of external control signals including the clock are disabled. Returning CKE to high enables the clock and initiates the refresh exit operation. After the exit command, at least one tRC delay is required prior to any access command. DQM has two functions for data I/O read and write operations. During reads, when it turns to "high" at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM Data Disable Latency tDQZ ). It also provides a data mask function for writes. When DQM is activated, the write operation at the next clock is prohibited (DQM Write Mask Latency tDQW = zero clocks). DQM is used for device selection, byte selection and bus control in a memory system. LDQM controls DQ0 to DQ7, UDQM controls DQ8 to DQ15. During normal access mode, CKE is held high enabling the clock. When CKE is low, it freezes the internal clock and extends data read and write operations. One clock delay is required for mode entry and exit (Clock Suspend Latency tCSL). In order to reduce standby power consumption, a power down mode is available. All banks must be precharged and the necessary Precharge delay (trp) must occur before the SDRAM can enter the Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh operations, therefore the device can't remain in Power Down mode longer than the Refresh period (tref) of the device. Exit from this mode is performed by taking CKE "high". One clock delay is required for mode entry and exit. CILETIV LESOM DQM Function Suspend Mode Power Down Precharge Command There is also a separate precharge command available. When RAS and WE are low and CAS is high at a clock timing, it triggers the precharge operation. With A10 being low, the BA is used select bank to precharge. The precharge command can be imposed one clock before the last data out for CAS latency = 2, two clocks before the last data out for CAS latency = 3. Writes require a time delay twr from the last data out to apply the precharge command. If A10 is high, all banks will be precharged. Burst Termination Once a burst read or write operation has been initiated, there are several methods in which to terminate the burst operation prematurely. These methods include using another Read or Write Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank. When interrupting a burst with another Read or Write Command care must be taken to avoid I/O contention. The Burst Stop Command, however, has the fewest restrictions making it the easiest method to use when terminating a burst operation before it has been completed. If a Burst Stop command is issued during a burst write operation, then any residual data from the burst write cycle will be ignored. Data that is presented on the I/O pins before the Burst Stop Command is registered will be written to the memory. V54C316162V Rev. 2.9 September 2001 7 V54C316162V Note: 1. All voltages are referenced to VSS. 2. VIH may overshoot to VCC + 2.0 V for pulse width of < 4ns with 3.3V. VIL may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference. CILETIV LESOM Parameter Input high voltage Input low voltage Absolute Maximum Ratings* Operating temperature range ..................0 to 70 C Storage temperature range ............... -55 to 150 C Input/output voltage .................. -0.3 to (VCC+0.3) V Power supply voltage .......................... -0.3 to 4.6 V Power dissipation ............................................. 1 W Data out current (short circuit) ...................... 50 mA *Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operation and Characteristics TA = 0 to 70 C; VSS = 0 V; VCC,VCCQ = 3.3 V 0.3 V Limit Values Symbol VIH VIL VOH VOL II(L) IO(L) Min. 2.0 - 0.3 2.4 - -5 -5 Max. Vcc+0.3 0.8 - 0.4 5 5 Unit V V V V A A Notes 1, 2 1, 2 Output high voltage (IOUT = - 2.0 mA) Output low voltage (IOUT = 2.0 mA) Input leakage current, any input (0 V < V IN < 3.6 V, all other inputs = 0 V) Output leakage current (DQ is disabled, 0 V < VOUT < VCC ) Capacitance VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200mV Pin Clock RAS, CAS, WE, CS, CKE, L(U)DQM A0-A10 DQ0-DQ 15 Symbol CCLK CIN CADD COUT Min. 2 2 2 3 Max. 4 4 4 5 Unit pF pF pF pF V54C316162V Rev.2.9 September 2001 8 V54C316162V 4. These parameter are measured with continuous data stream during read access and all DQ toggling. CILETIV LESOM Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS ICC4 ICC5 ICC6 Operating Currents (TA = 0 to 70C, VCC = 3.3V 0.3V) (Recommended Operating Conditions unless otherwise noted) Max. Parameter & Test Condition Operating Current Active-precharge command cycling, without Burst Operation Precharge Standby Current in Power Down Mode CS =VIH, CKE VIL(max) Precharge Standby Current in Non-Power Down Mode CS =VIH, CKE VIL(max) Active Standby Current in Power-down mode Active Standby Current in non Power-down mode Burst Operating Current Read/Write command cycling Auto Refresh Current Auto Refresh command cycling Self Refresh Current Self Refresh Mode, CKE=<0.2V 1 bank operation tRC = tRCMIN., tCK = tCKMIN CL = 3 tCK = min. tCK = Infinity tCK = min. tCK = Infinity CKE = -5 125 -55 120 -6 115 -7 105 Unit Note mA 3 2 2 2 2 mA 3 2 15 2 15 2 15 2 15 mA mA 3 5 5 5 5 mA 3 3 45 40 160 3 3 45 40 155 3 3 45 40 150 3 3 45 40 140 mA mA mA mA mA 3, 4 110 105 100 90 mA 3 1 1 1 1 mA Notes: 3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during tCK except for ICC6 and for standby current when tCK = infinity. V54C316162V Rev. 2.9 September 2001 9 V54C316162V CILETIV LESOM # Symbol Parameter Clock and Clock Enable 1 tCK 2 tCK 3 tAC 4 5 6 tCH tCL tT AC Characteristics (1,2,3) TA = 0 to 70C; VSS = 0 V; VCC = 3.3 V 0.3 V, tT = 1 ns Limit Values -5 Min. Max. Min. -55 Max. Min. -6 Max. Min. -7 Max. Unit Clock Cycle Time CAS Latency = 3 CAS Latency = 2 Clock Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 Clock High Pulse Width Clock Low Pulse Width Transition time 5 10 - - 5.5 10 - - 6 10 - - 7 10 - - ns ns - - 200 100 - - 183 100 - - 166 100 - - 143 100 MHz MHz - - 2.5 2.5 1 5 7 - - 10 - - 2.5 2.5 1 5.3 7 - - 10 - - 2.5 2.5 1 5.5 7 - - 10 - - 2.5 2.5 1 5.5 7 - - 10 ns ns ns ns ns 2 3 Setup and Hold Times 7 8 9 10 11 12 13 14 tCMDS tAS tDS tCKS tCMDH tAH tDH tCKH Command Setup Time Address Setup Time Data In Setup Time CKE Setup Time Command Hold Time Address Hold Time Data In Hold Time CKE Hold Time 2 2 2 2 1 1 1 1 - - - - - - - - 2 2 2 2 1 1 1 1 - - - - - - - - 2 2 2 2 1 1 1 1 - - - - - - - - 2 2 2 2 1 1 1 1 - - - - - - - - ns ns ns ns ns ns ns ns 4 4 4 4 4 4 4 4 Common Parameters 15 16 17 18 19 tRCD tRAS tRC tRP tRRD Row to Column Delay Time Row Active Time Row Cycle Time Row Precharge Time Activate(a) to Activate(b) Command period CAS(a) to CAS(b) Command period Mode Register Set-up time Power Down Mode Entry Time 15 40 60 15 10 - 100K - - - 16.5 45 63 17 11 - 100K - - - 18 48 66 18 12 - 100K - - - 18 48 70 21 14 - 100K - - - ns ns ns ns ns 5 5 5 5 5 20 tCCD tRCS tSB 1 - 1 - 1 - 1 - CLK 21 22 10 0 - 5 11 0 - 5.5 12 0 - 6 14 0 - 7 ns ns Refresh Cycle 23 tREF Refresh Period (4096 cycles) - 64 - 64 - 64 - 64 ms V54C316162V Rev.2.9 September 2001 10 V54C316162V TA = 0 to 70C; VSS = 0 V; VCC = 3.3 V 0.3 V, tT = 1 ns Limit Values -5 # Symbol Parameter 24 tSREX Self Refresh Exit Time CILETIV LESOM Read Cycle 25 27 tOH tHZ tDQZ 28 AC Characteristics (1,2,3) (Continued) -55 Max. Min. Max. Min. -6 Max. 2 CLK + tRC -7 Min. Max. Unit 6 Min. 2 CLK + tRC Data Out Hold Time CAS Latency = 3 CAS Latency = 2 DQM Data Out Disable Latency 2.5 - - 2 - 5 7 - 2.5 - - 2 - 5.3 7 - 2.5 - - 2 - 5.5 7 - 2.5 - - 2 - 5.5 7 - ns ns CLK Write Cycle 29 tWR Write Recovery Time CAS Latency = 3 CAS Latency = 2 DQM Write Mask Latency 5 10 0 - - - 5.5 10 0 - - - 6 10 0 - - - 7 10 0 - - - ns ns CLK 30 tDQW Notes for AC Parameters: 1. For proper power-up see the operation section of this data sheet. 2. AC timing tests have VIL = 0.8V and V IH = 2.0V with the timing referenced to the 1.4 V crossover point. The transition time is measured between VIH and VIL. All AC measurements assume tT = 1ns with the AC output load circuit shown in Figure 1. tCK VIH CLK VIL + 1.4 V 50 Ohm tT tCS COMMAND tCH 1.4V Z=50 Ohm tAC tLZ tOH tAC I/O 50 pF 1.4V OUTPUT tHZ Figure 1. 3. If clock rising time is longer than 1 ns, a time (tT/2 - 0.5) ns has to be added to this parameter. 4. If tT is longer than 1 ns, a time (tT - 1) ns has to be added to this parameter. 5. These parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycle = specified value of timing period (counted in fractions as a whole number) 6. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. V54C316162V Rev. 2.9 September 2001 11 V54C316162V CILETIV LESOM Timing Diagrams 1. Bank Activate Command Cycle 2. Burst Read Operation 3. Read Interrupted by a Read 4. Read to Write Interval 4.1 Read to Write Interval 4.2 Minimum Read to Write Interval 4.3 Non-Minimum Read to Write Interval 5. Burst Write Operation 6. Write and Read Interrupt 6.1 Write Interrupted by a Write 6.2 Write Interrupted by Read 7. Burst Write & Read with Auto-Precharge 7.1 Burst Write with Auto-Precharge 7.2 Burst Read with Auto-Precharge 8. Burst Termination 8.1 Termination of a Full Page Burst Write Operation 8.2 Termination of a Full Page Burst Write Operation V54C316162V Rev.2.9 September 2001 12 V54C316162V 2. Burst Read Operation (Burst Length = 4, CAS latency = 2, 3) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 COMMAND CAS latency = 2 tCK2, I/O's CAS latency = 3 tCK3, I/O's CILETIV LESOM (CAS latency = 3) T0 CLK ADDRESS COMMAND : "H" or "L" Bank A Activate READ A 1. Bank Activate Command Cycle T1 T T T T T .......... Bank A Row Addr. Bank A Col. Addr. .......... Bank B Row Addr. Bank A Row Addr. tRCD NOP NOP Write A with Auto Precharge .......... Bank B Activate tRRD NOP Bank A Activate tRC NOP NOP NOP NOP NOP NOP NOP NOP DOUT A0 DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 DOUT A3 V54C316162V Rev. 2.9 September 2001 13 V54C316162V 4.1 Read to Write Interval (Burst Length = 4, CAS latency = 3) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 CILETIV LESOM T0 CLK COMMAND READ A CAS latency = 2 3. Read Interrupted by a Read (Burst Length = 4, CAS latency = 2, 3) T1 T2 T3 T4 T5 T6 T7 T8 READ B NOP NOP NOP NOP NOP NOP NOP tCK2, I/O's CAS latency = 3 DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 tCK3, I/O's DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 Minimum delay between the Read and Write Commands = 4+1 = 5 cycles DQM tDQZ tDQW COMMAND NOP READ A NOP NOP NOP NOP WRITE B NOP NOP I/O's : "H" or "L" DOUT A0 Must be Hi-Z before the Write Command DIN B0 DIN B1 DIN B2 V54C316162V Rev.2.9 September 2001 14 V54C316162V 4.3 Non-Minimum Read to Write Interval (Burst Length = 4, CAS latency = 2, 3 T0 CLK tDQW CILETIV LESOM T0 CLK DQM COMMAND NOP CAS latency = 2 4.2 Minimum Read to Write Interval (Burst Length = 4, CAS latency = 2) T1 T2 T3 T4 T5 T6 T7 T8 tDQW tDQZ 1 Clk Interval BANK A ACTIVATE NOP NOP READ A WRITE A NOP NOP NOP Must be Hi-Z before the Write Command tCK2, I/O's : "H" or "L" DIN A0 DIN A1 DIN A2 DIN A3 T1 T2 T3 T4 T5 T6 T7 T8 DQM tDQZ COMMAND NOP READ A NOP NOP READ A NOP WRITE B NOP NOP CAS latency = 2 tCK1, I/O's CAS latency = 3 DOUT A0 DOUT A1 Must be Hi-Z before the Write Command DIN B0 DIN B1 DIN B2 tCK2, I/O's : "H" or "L" DOUT A0 DIN B0 DIN B1 DIN B2 V54C316162V Rev. 2.9 September 2001 15 V54C316162V 6.1 Write Interrupted by a Write (Burst Length = 4, CAS latency = 2, 3) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 CILETIV LESOM T0 CLK COMMAND NOP 5. Burst Write Operation (Burst Length = 4, CAS latency = 2, 3) T1 T2 T3 T4 T5 T6 T7 T8 WRITE A NOP NOP NOP NOP NOP NOP NOP I/O's DIN A0 DIN A1 DIN A2 DIN A3 don't care The first data element and the Write are registered on the same clock edge. Extra data is ignored after termination of a Burst. COMMAND NOP WRITE A WRITE B NOP NOP NOP NOP NOP NOP 1 Clk Interval I/O's DIN A0 DIN B0 DIN B1 DIN B2 DIN B3 V54C316162V Rev.2.9 September 2001 16 V54C316162V 7. Burst Write with Auto-Precharge Burst Length = 2, CAS latency = 2, 3) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 CILETIV LESOM T0 CLK COMMAND NOP CAS latency = 2 6.2 Write Interrupted by a Read (Burst Length = 4, CAS latency = 2, 3) T1 T2 T3 T4 T5 T6 T7 T8 WRITE A READ B NOP NOP NOP NOP NOP NOP tCK2, I/O's CAS latency = 3 DIN A0 don't care DOUT B0 DOUT B1 DOUT B2 DOUT B3 tCK3, I/O's DIN A0 don't care don't care DOUT B0 DOUT B1 DOUT B2 DOUT B3 Input data must be removed from the I/O's at least one clock cycle before the Read dataAPpears on the outputs to avoid data contention. COMMAND BANK A ACTIVE NOP NOP WRITE A Auto-Precharge NOP NOP NOP NOP NOP tWR CAS latency = 2 DIN A0 DIN A1 tRP I/O's CAS latency = 3 tWR * * tRP I/O's DIN A0 DIN A1 Bank can be reactivated after trp * Begin Autoprecharge V54C316162V Rev. 2.9 September 2001 17 V54C316162V CILETIV LESOM T0 CLK COMMAND READ A CAS latency = 2 7.2 Burst Read with Auto-Precharge Burst Length = 4, CAS latency = 2, 3) T1 T2 T3 T4 T5 T6 T7 T8 NOP NOP NOP NOP NOP NOP NOP NOP tCK2, I/O's CAS latency = 3 DOUT A0 DOUT A1 * * * t RP DOUT A3 DOUT A2 t RP DOUT A2 DOUT A3 tCK3, I/O's DOUT A0 DOUT A1 Bank can be reactivated after tRP * Begin Autoprecharge V54C316162V Rev.2.9 September 2001 18 V54C316162V 8.2 Termination of a Full Page Burst Write Operation (CAS latency = 2, 3) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 CILETIV LESOM (CAS latency = 2, 3) T0 CLK COMMAND READ A CAS latency = 2 8.1 Termination of a Full Page Burst Read Operation T1 T2 T3 T4 T5 T6 T7 T8 NOP NOP NOP Burst Stop NOP NOP NOP NOP tCK2, I/O's CAS latency = 3 DOUT A0 DOUT A1 DOUT A2 DOUT A3 tCK3, I/O's DOUT A0 DOUT A1 DOUT A2 DOUT A3 The burst ends after a delay equal to the CAS latency. COMMAND CAS latency = 2,3 NOP WRITE A NOP NOP Burst Stop NOP NOP NOP NOP I/O's DIN A0 DIN A1 DIN A2 don't care Input data for the Write is masked. V54C316162V Rev. 2.9 September 2001 19 V54C316162V CILETIV LESOM Package Diagram 50-Pin Plastic TSOP-II (400 mil) 0.039 0.002 [1 0.05] 0.0040.002 [0.10.05] 0.047 Max [1.2 Max] 0.031 [0.8] 0.016 +0.002 -0.004 0.4 +0.05 -0.1 50 26 0.008 [0.2] M 44x 0.004 [0.1] 1 1 0.4 0.005 [10.16 0.13] 0.006 -0.001 0.15 -0.03 +0.08 +0.003 0.0200.004 [0.5 0.1] 0.4630.008 [11.76 0.2] 25 0.8250.005 [20.950.13] Unit in inches [mm] 1 Does not include plastic or metal protrusion of 0.010 [0.25] max. per side V54C316162V Rev.2.9 September 2001 20 WORLDWIDE OFFICES TAIWAN 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888 V54C316162V UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 44-1698-748515 FAX: 44-1698-748516 U.S.A. 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 NORTHWESTERN 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC. MOSEL VITELIC CILETIV LESOM SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 JAPAN ONZE 1852 BUILDING 6F 2-14-6 SHINTOMI, CHUO-KU TOKYO 104-0041 PHONE: 03-3537-1400 FAX: 03-3537-1402 GERMANY (CONTINENTAL EUROPE & ISRAEL) BENZSTRASSE 32 71083 HERRENBERG GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22 U.S. SALES OFFICES SOUTHWESTERN 302 N. EL CAMINO REAL #200 SAN CLEMENTE, CA 92672 PHONE: 949-361-7873 FAX: 949-361-7807 CENTRAL, NORTHEASTERN & SOUTHEASTERN 604 FIELDWOOD CIRCLE RICHARDSON, TX 75081 PHONE: 214-352-3775 FAX: 214-904-9029 (c) Copyright 2001, MOSEL VITELIC Inc. 9/01 Printed in U.S.A. MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. 3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461 |
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